EVALUATION OF GAS-MIXTURES WITH HIGH-TEMPERATURE GAS SENSORS BASED ON SILICON-CARBIDE

被引：11

作者：

ARBAB, A

SPETZ, A

LUNDSTROM, I

机构：

[1] Laboratory of Applied Physics, University of Linköping

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1994年 / 19卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(93)01085-I

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Field-effect devices with a catalytic metal gate are operated as gas sensors over a large temperature range by the use of 6H-silicon carbide (bandgap 2.9 eV) instead of silicon (1.1 eV) as the semiconducting material. We have produced metal-silicon dioxide-silicon carbide (MOSiC) capacitors with platinum as the gate metal that can be operated above 800-degrees-C. The sensitivity of the Pt-MOSiC devices to hydrogen and hydrocarbons was tested in various oxygen atmospheres. The response to mixtures of hydrogen and saturated hydrocarbons indicated the existence of two different sensing mechanisms.

引用

页码：562 / 565

页数：4

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