LAYERED HETEROEPITAXIAL GROWTH OF GERMANIUM ON SI(015) OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

被引：42

作者：

TOMITORI, M ^{[1
]}

WATANABE, K ^{[1
]}

KOBAYASHI, M ^{[1
]}

IWAWAKI, F ^{[1
]}

NISHIKAWA, O ^{[1
]}

机构：

[1] KANAZAWA INST TECHNOL,FAC ENGN,DEPT ELECTR,KANAZAWA,ISHIKAWA 921,JAPAN

来源：

SURFACE SCIENCE | 1994年 / 301卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)91301-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Germanium growth on a Si(015) substrate was examined by scanning tunneling microscopy (STM) on an atomic scale. The Ge deposition on a Si(001) substrate showed the Stranski-Krastanov growth mode, where the deposited films grew layer-by-layer up to a few ML followed by three-dimensional island growth with (015) facets. Thus the Ge films were deposited on the Si(015) substrate in this study. As expected, the deposited Ge layers exhibited the layered growth mode up to thicker than 10 ML at a growth temperature of 400 degrees C. The surface and the step structures, which seemed deeply related to the layered growth mechanism, were observed with STM and discussed in detail.

引用

页码：214 / 222

页数：9

共 13 条

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