QUANTUM CONFINEMENT OF HOLES IN SI1-XGEX/SI QUANTUM-WELLS STUDIED BY ADMITTANCE SPECTROSCOPY

被引：9

作者：

LU, F ^{[1
]}

JIANG, JY ^{[1
]}

SUN, HH ^{[1
]}

GONG, DW ^{[1
]}

ZHANG, XG ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.51.4213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A carrier thermal-emission model is presented to analyze the emission and capture of carriers in the admittance spectroscopy of Si/Si1-xGex/Si quantum wells. The experimental activation energy is related to the band offset at the interface of the SiGe well and the Si barrier as well as the confined hole-energy level in the well. The measured band offset for a single quantum well with Ge content of 0.33 is much closer to the theoretical prediction than that derived from the equivalent circuit model. The quantum size effects for both single-quantum-well and multiple-quantum-well samples are clearly revealed by the peak shifts of the conductance spectra. The emissions of holes from the confined heavy-hole subband and the light-hole subband in multiple-quantum-well samples with small well widths appear as a distinct doublet in the conductance spectra. © 1995 The American Physical Society.

引用

页码：4213 / 4217

页数：5

共 9 条

[1] CONDUCTION-BAND OFFSETS IN PSEUDOMORPHIC INXGA1-XAS/AL0.2GA0.8AS QUANTUM WELLS (0.07 LESS-THAN-OR-EQUAL-TO 0.18) MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].