ELECTROLUMINESCENCE EMISSION FROM INDIUM OXIDE AND INDIUM-TIN-OXIDE

被引：22

作者：

FALCONY, C

KIRTLEY, JR

DIMARIA, DJ

MA, TP

CHEN, TC

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.335730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3556 / 3558

页数：3

共 10 条

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[7] A STUDY OF THE ELECTRICAL AND LUMINESCENCE CHARACTERISTICS OF A NOVEL SI-BASED THIN-FILM ELECTROLUMINESCENT DEVICE [J].

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[8] A NEW LOW-VOLTAGE SI-COMPATIBLE ELECTROLUMINESCENT DEVICE [J].

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[9]

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[10] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J].

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