RELATIONSHIP BETWEEN INTERFACIAL SUPERSTRUCTURES AND SCHOTTKY-BARRIER HEIGHTS OF SB/GAAS CONTACTS

被引：17

作者：

HIROSE, K

AKIMOTO, K

HIROSAWA, I

MIZUKI, J

MIZUTANI, T

MATSUI, J

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.43.4538

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interfacial superstructures of Sb/GaAs(001) contacts are observed by use of the grazing-incidence x-ray-diffraction method. The Schottky-barrier heights for these contacts are also determined by using the current-voltage or the capacitance-voltage methods. The Schottky-barrier height of the contact with the (1x6) interfacial superstructure is found to be larger than that of the contact with the (1x4) interfacial superstructure by as much as 0.1 eV. This result indicates the importance of the local electronic structure for Schottky-barrier formation at the metal-GaAs interfaces. The present results are discussed in connection with the current Schottky-barrier models.

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页码：4538 / 4540

页数：3

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