DISSOCIATIVE VALENCE FORCE-FIELD POTENTIAL FOR SILICON

被引：59

作者：

BRENNER, DW

GARRISON, BJ

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.1304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1304 / 1307

页数：4

共 13 条

[1] Interaction of the van der Waals type between three atoms [J].

Axilrod, BM ;

Teller, E .

JOURNAL OF CHEMICAL PHYSICS, 1943, 11 (06) :299-300

[2] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].

BISWAS, R ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004

[3] DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE [J].

CARDILLO, MJ ;

BECKER, GE .

PHYSICAL REVIEW B, 1980, 21 (04) :1497-1510

[4] ANHARMONIC VIBRATION AND FORBIDDEN REFLEXIONS IN SILICON AND GERMANIUM [J].

DAWSON, B ;

WILLIS, BTM .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 298 (1454) :307-&

[5]

DOLLING G, 1963, INELASTIC SCATTERING, V2, P42

[6]

KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[8] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].

MARTIN, RM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+

[9] GENERAL VALENCE FORCE FIELD FOR DIAMOND [J].

MUSGRAVE, MJ ;

POPLE, JA .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 268 (1335) :474-&

[10] EFFECT OF LATTICE POTENTIAL UPON THE SURFACE-DIFFUSION OF SI ON SI(100) [J].

NOORBATCHA, I ;

RAFF, LM ;

THOMPSON, DL .

JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (11) :6009-6011

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