THERMAL-CHARACTERISTICS OF BLUE-GREEN II-VI SEMICONDUCTOR-LASERS

被引：14

作者：

DRENTEN, RR

HABERERN, KW

GAINES, JM

机构：

[1] Philips Laboratories, Philips Electronics North America Corporation, Briarcliff Manor, NY 10510

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threshold current densities and wavelengths of gain maximum and longitudinal modes have been determined as a function of temperature for various laser structures. The onset of intrapulse heating has been studied and interpreted. In Zn0.92Mg0.08S0.12Se0.88/ZnS0.06Se0.94/Zn0.8Cd0.2Se lasers, thermal resistances have been measured, using substrate-up and substrate-down mounting. From these, continuous-wave lasing regimes have been determined.

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页码：3988 / 3993

页数：6

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