GEMINATE RECOMBINATION IN A-SI-H

被引:21
作者
STACHOWITZ, R
BORT, M
CARIUS, R
FUHS, W
LIEDTKE, S
机构
[1] UNIV MARBURG, WISSENSCH ZENTRUM MAT WISSENSCH, W-3550 MARBURG, GERMANY
[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ISI, W-5170 JULICH 1, GERMANY
关键词
D O I
10.1016/S0022-3093(05)80177-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The recombination kinetics in a-Si:H are studied by frequency resolved spectroscopy (FRS) and light-induced ESR (LESR) as a function of the generation rate G down to values as low as 10(16) cm-3s-1. For G < 10(19) cm-3s-1 the recombination kinetics are independent of the steady state carrier concentration n(s) which strongly indicates that in this range of low G geminate recombination prevails. A critical discussion of the FRS technique reveals that this method does not yield the lifetime distribution P(tau) directly. The experimental FRS spectra are compared with predictions derived from a recent theory by Shklovskii et al.. We show that this theory cannot account for the experimental results.
引用
收藏
页码:551 / 554
页数:4
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