ON CARRIER DENSITIES AND LIFETIMES IN A-SI - H AT LOW-TEMPERATURES

被引：32

作者：

SEARLE, TM

机构：

[1] Department of Physics, The University of Sheffield, Sheffield

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1990年 / 61卷 / 04期

关键词：

D O I：

10.1080/09500839008202367

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple model for the equilibrium carrier population in a-Si:H under illumination at low temperature is given. Its principal features are that the distribution is distant-pair, or non-geminate, and that the controlling recombination is radiative. We compare its predictions with the results of LESR, a.c. loss, photoconductivity and photoluminescence (PL) lifetime distributions and find satisfactory agreement with experiment. © 1990 Taylor & Francis Group, LLC.

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页码：251 / 258

页数：8

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