IMPROVEMENT IN VERY THIN GATE OXIDE INTEGRITY BY ION-IMPLANTATION

被引：2

作者：

BAGLEE, DA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 04期

关键词：

D O I：

10.1109/EDL.1983.25661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：94 / 95

页数：2

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[2] RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN
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[3] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714
[4] HI-C RAM CELL CONCEPT
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FU, HS
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