A 15-GHZ GATE ARRAY IMPLEMENTED WITH ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:5
作者
WANG, KC
ASBECK, PM
CHANG, MCF
NUBLING, RB
PIERSON, RL
SHENG, NH
SULLIVAN, GJ
YU, J
CHEN, A
CLEMENT, D
TSEN, TC
BASIT, HF
GEORGE, JD
YOUNG, R
机构
[1] ROCKWELL MICROELECTR TECHNOL CTR,NEWBURY PK,CA 91320
[2] IBM CORP,FISHKILL,NY 12533
[3] IBM CORP,LOS GATOS,CA 95193
关键词
D O I
10.1109/4.98988
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT's, using an ECL/CML circuit approach. The HBT's have f(t)'s and f(max)'s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurements on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.
引用
收藏
页码:1669 / 1672
页数:4
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