MAGNETIC-FIELD INDUCED METAL-INSULATOR TRANSITIONS IN MODULATION-DOPED MULTIPLE-QUANTUM-WELL STRUCTURES

被引：2

作者：

WANG, YJ ^{[1
]}

MCCOMBE, BD ^{[1
]}

SCHAFF, W ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90405-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The evolution from impurity band conduction, both insulating and metallic, to a "truly metallic" state has been realized by varying magnetic fields applied to a set of 240 angstrom/240 angstrom modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (R(xx) and R(xy)) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.

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页码：547 / 548

页数：2

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