DEEP-LEVEL DEFECTS IN ALPHA-PARTICLE IRRADIATED 6H SILICON-CARBIDE

被引：34

作者：

RYBICKI, GC

机构：

[1] Photovoltaics Branch, NASA Lewis Research Center, Cleveland

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.360048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A deep level transient spectroscopy study of native and radiation induced defects in metal organic chemical vapor deposition rt on p 6H-SiC diodes has been conducted. Three majority carrier levels were found, at E(v) +0.50, +0.55, and +0.69 eV, and three minority carrier deep levels were found, at E(c) -0.38, -0.48, and -0.58 eV. These six levels were initially observed in the unirradiated materials. Their concentration increased 2 to 13-fold after irradiation to a fluence of 2X10(11) cm(-2) of 5.5 MeV alpha particles. In addition the carrier removal was monitored during irradiation, and a carrier removal rate of 7.8x10(4) cm(-1) for 5.5 MeV alpha particles was measured. When compared with a similar study of alpha particle irradiation of InP, the results suggest that SiC has radiation resistance comparable to that of InP, another highly radiation resistant semiconductor. (C) 1995 American Institute of Physics.

引用

页码：2996 / 3000

页数：5

共 27 条

[1]

ANIKIN MM, 1988, SOV PHYS SEMICOND+, V22, P181

[2]

ANIKIN MM, 1985, SOV PHYS SEMICOND+, V19, P69

[3]

BALLANDOVICH VS, 1987, CRYST LATT DEF AMORP, V13, P189

[4] ESR IN IRRADIATED SILICON CARBIDE [J].

BALONA, LADS ;

LOUBSER, JHN .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (11) :2344-&

[5] ENERGY-DEPENDENCE OF ELECTRON DAMAGE AND DISPLACEMENT THRESHOLD ENERGY IN 6H SILICON-CARBIDE [J].

BARRY, AL ;

LEHMANN, B ;

FRITSCH, D ;

BRAUNIG, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1111-1115

[6]

BILLINGTON D, 1961, RAD DAMAGE SOLIDS, P19

[7] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[8] RADIATIVE RECOMBINATION OF AL+-IMPLANTED ALPHA-SIC P-N STRUCTURES [J].

GUSEV, VM ;

DEMAKOV, KD ;

STOLYAROVA, VG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 69 (3-4) :307-310

[9] ELECTRON-SPIN RESONANCE IN ELECTRON-IRRADIATED 3C-SIC [J].

ITOH, H ;

HAYAKAWA, N ;

NASHIYAMA, I ;

SAKUMA, E .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4529-4531

[10] RADIATION-INDUCED DEFECTS IN CVD-GROWN 3C-SIC [J].

ITOH, H ;

YOSHIKAWA, M ;

NASHIYAMA, I ;

MISAWA, S ;

OKUMURA, H ;

YOSHIDA, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1732-1738

← 1 2 3 →