CORRELATION OF DIELECTRIC-BREAKDOWN WITH HOLE TRANSPORT FOR ULTRATHIN THERMAL OXIDES AND N2O OXYNITRIDES

被引：31

作者：

HAO, MY ^{[1
]}

CHEN, WM ^{[1
]}

LAI, K ^{[1
]}

LEE, JC ^{[1
]}

GARDNER, M ^{[1
]}

FULFORD, J ^{[1
]}

机构：

[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the dielectric breakdown characteristics of thermal oxides and N2O-based oxynitrides have been studied. A direct correlation was found between dielectric breakdown and the hole current generated within the gate dielectrics. The dependence of dielectric breakdown on oxide thickness was also studied. It was found that both charge-to-breakdown and hole-fluence-to-breakdown for the N2O oxynitrides were higher than those for the thermal oxides throughout the thickness range studied (33-87 Å). The results suggest that N2O oxynitrides can sustain more damage before breakdown and thus have superior dielectric integrity compared to the thermal oxides.© 1995 American Institute of Physics.

引用

页码：1126 / 1128

页数：3

共 10 条

[1]

Chen I. C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P660

[2] THE EFFECT OF CHANNEL HOT-CARRIER STRESSING ON GATE-OXIDE INTEGRITY IN MOSFETS [J].

CHEN, IC ;

CHOI, JY ;

CHAN, TY ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2253-2258

[3] ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, C .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4544-4548

[4]

Hwang H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P421, DOI 10.1109/IEDM.1990.237142

[5] MODELING AND CHARACTERIZATION OF GATE OXIDE RELIABILITY [J].

LEE, JC ;

CHEN, IC ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2268-2278

[6]

Liu Z. H., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P625, DOI 10.1109/IEDM.1992.307438

[7]

SCHUEGRAF KF, 1993, INT REL PHY, P7, DOI 10.1109/RELPHY.1993.283311

[8]

Sharma U., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P461, DOI 10.1109/IEDM.1992.307401

[9] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN THERMALLY GROWN SIO2-FILMS [J].

YAMABE, K ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :423-428

[10]

YAMADA H, 1991, APPL PHYS LETT, V59, P2159, DOI 10.1063/1.106114

← 1 →