THE PROPERTIES OF GOLD IN BRIDGMAN GROWN CDXHG1-XTE

被引：11

作者：

JONES, CL ^{[1
]}

CAPPER, P ^{[1
]}

QUELCH, MJT ^{[1
]}

BROWN, M ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90325-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：417 / 432

页数：16

共 19 条

[1] FACTORS AFFECTING THE ELECTRICAL CHARACTERISTICS OF CADMIUM MERCURY TELLURIDE CRYSTALS [J].

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CAPPER, P ;

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[2] STUDY OF CASTING IN THE CDXHG1-XTE SYSTEM [J].

BARTLETT, BE ;

CAPPER, P ;

HARRIS, JE ;

QUELCH, MJT .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) :341-350

[3] EFFECTS OF GROWTH SPEED ON THE COMPOSITIONAL VARIATIONS IN CRYSTALS OF CADMIUM MERCURY TELLURIDE [J].

BARTLETT, BE ;

CAPPER, P ;

HARRIS, JE ;

QUELCH, MJT .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (05) :623-629

[4]

BLACKBURN A, 1982, INFRARED PHYS, V22, P5

[5] SOLUBILITY OF GOLD IN P-TYPE SILICON [J].

BROWN, M ;

JONES, CL ;

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[6] DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS [J].

BROWN, M ;

WILLOUGHBY, AFW .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :27-39

[7] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[8] GROWTH OF CDXHG1-XTE - COMPARISON OF SOME PROPERTIES WITH THE PREDICTIONS OF 2 MELT GROWTH-MODELS [J].

CAPPER, P ;

JONES, CL ;

PEARCE, EJ ;

QUELCH, MJT .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :487-497

[9] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].

CAPPER, P .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :280-299

[10] IMPROVED SYSTEM FOR THE BRIDGMAN GROWTH OF CRYSTALS WITH TOXIC AND-OR HIGHLY VOLATILE COMPONENTS [J].

CAPPER, P ;

HARRIS, JE ;

NICHOLSON, D ;

COLE, D .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) :575-581

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