IMPROVED UNIFORMITY OF RESISTIVITY DISTRIBUTION IN LEC SEMI-INSULATING GAAS PRODUCED BY ANNEALING

被引：23

作者：

OBOKATA, T

MATSUMURA, T

TERASHIMA, K

ORITO, F

KIKUTA, T

FUKUDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L602 / L605

页数：4

共 7 条

[1]

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[2]

BONNET M, 1982, P GAAS INTEGRATED CI, P54

[3]

GRANT I, 1982, 2ND P C SEM INS 3 5, P98

KIKUTA, T ;

TERASHIMA, K ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L409-L411

KITAHARA, K ;

OZEKI, M ;

SHIBATOMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :207-211

MATSUMURA, T ;

EMORI, H ;

TERASHIMA, K ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L154-L156

[7]

RUMSBY D, 1983, P GAAS INTEGRATED CI, P34