学术探索
学术期刊
新闻热点
数据分析
智能评审

COMMENT ON RESONANT BONDS IN SYMMETRY-LOWERING DISTORTION AROUND A SILICON DIVACANCY

被引：13
作者：
WATKINS, GD
机构：
[1] Department of Physics, Lehigh University, Bethlehem, PA 18015
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.74.4353
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A Comment on the Letter by Mineo Saito and Atsushi Oshiyama, Phys. Rev. Lett. 73, 866 (1994). The authors of the Letter offer a Reply. © 1995 The American Physical Society.
引用
收藏
页码：4353 / 4353
页数：1
相关论文
共 5 条
[1]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J].
ELKIN, EL ;
WATKINS, GD .
PHYSICAL REVIEW, 1968, 174 (03) :881-&
[2]   RESONANT BONDS IN SYMMETRY-LOWERING DISTORTION AROUND A SI DIVACANCY [J].
SAITO, M ;
OSHIYAMA, A .
PHYSICAL REVIEW LETTERS, 1994, 73 (06) :866-869
[3]  
Sturge M. S., 1967, SOLID STATE PHYS
[4]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J].
WATKINS, GD ;
CORBETT, JW .
PHYSICAL REVIEW, 1965, 138 (2A) :A543-+
[5]  
WATKINS GD, 1989, RADIAT EFF DEFECT S, V111, P487
1