STUDY OF AMORPHOUS GE-SIO2-P+SI TUNNEL-JUNCTIONS

被引:5
作者
NAKASHITA, T [1 ]
HIROSE, M [1 ]
OSAKA, Y [1 ]
机构
[1] HIROSHIMA UNIV,FAC ENGN,DEPT ELECT ENGN,HIROSHIMA,JAPAN
关键词
D O I
10.1016/0022-3093(76)90006-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:45 / 56
页数:12
相关论文
共 16 条
[1]   POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS [J].
AUSTIN, IG ;
MOTT, NF .
ADVANCES IN PHYSICS, 1969, 18 (71) :41-+
[2]   STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS [J].
CHOPRA, KL ;
BAHL, SK .
PHYSICAL REVIEW B, 1970, 1 (06) :2545-&
[3]   THEORY OF TUNNELING INTO INTERFACE STATES [J].
FREEMAN, LB ;
DAHLKE, WE .
SOLID-STATE ELECTRONICS, 1970, 13 (11) :1483-+
[4]   ELECTRICAL PROPERTIES OF AMORPHOUS-GE ALLOYS AND ELECTRON TUNNELING IN AMORPHOUS-SEMICONDUCTORS [J].
HAUSER, JJ .
PHYSICAL REVIEW B, 1974, 9 (06) :2544-2557
[5]   NOTE ON LOCALIZED STATES IN AMORPHOUS-GERMANIUM [J].
HIROSE, M ;
TANIGUCHI, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) :175-176
[6]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS-GERMANIUM [J].
HIROSE, M ;
SUZUKI, T ;
YOSHIFUJI, S ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :40-45
[7]  
HIROSE M, 1975, JUL M STRUCT PROP AM, P29
[8]   INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].
KAR, S ;
DAHLKE, WE .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+
[9]  
KNEPPO J, 1973, THIN SOLID FILMS, V17, P43
[10]   FIELD-EFFECT IN AMORPHOUS-GERMANIUM [J].
MALHOTRA, AK ;
NEUDECK, GW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2690-2692