THE INFLUENCE OF IMPURITY CONCENTRATION ON EXCITON PHOTOLUMINESCENCE IN GAAS AND INP

被引：11

作者：

PEN, HF

DRIESSEN, FAJM

OLSTHOORN, SM

GILING, LJ

机构：

[1] Dept. of Exp. Solid State Phys., Nijmegen Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期

关键词：

D O I：

10.1088/0268-1242/7/11/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation of the exciton photoluminescence (PL) spectra of high-purity nominally n-type GaAs and InP layers, grown by metalorganic vapour phase epitaxy. The results are discussed in terms of exciton-polariton kinetics. The ratio of the integrated emission intensities of neutral donor-bound exciton (D0, X) transitions and tree exciton-polariton (FX) transitions r(DF) = I(D0, X)/I(FX) shows a sublinear dependence upon neutral donor concentration n(D)0 deduced from 77 K Hall measurements. This relationship is particularly useful for estimating carrier concentrations in high-purity materials, which cannot be characterized by Hall measurements due to depletion.

引用

页码：1400 / 1406

页数：7

共 28 条

[21] GROWTH-INDUCED SHALLOW ACCEPTOR DEFECT AND RELATED LUMINESCENCE EFFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS [J].