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ABSORPTION AND OPTICAL GAIN SPECTRA AND BAND-GAP RENORMALIZATION OF HIGHLY EXCITED QUANTUM-WELL SYSTEMS

被引：25
作者：
ELL, C
HAUG, H
机构：
[1] Institut für Theoretische Physik, Universität Frankfurt
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 159卷 / 01期
关键词：
D O I：
10.1002/pssb.2221590113
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Optical spectra of highly excited quantum well systems are calculated. Many‐body effects are included within the random phase approximation (RPA). In order to describe a realistic semiconductor quantum well system, finite barrier heights, a thickness‐dependent Coulomb potential and several subbands are taken into account. Furthermore, for quantum well systems like InP/InGaAs or GaAlAs/GaAs, light and heavy hole subbands are included within an effective mass approximation. The renormalization of the band gaps of the allowed transitions are discussed and compared with experimental data of Lach et al. In the range of very high densities deviations between experiment and theory are found, which are probably due to increased intersubband scattering. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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页码：117 / 124
页数：8
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