GAAS-GAP STRAINED-LAYER SUPERLATTICES GROWN BY ATOMIC LAYER EPITAXY

被引：18

作者：

OZEKI, M

KODAMA, K

SAKUMA, Y

OHTSUKA, N

TAKANOHASHI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.585003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 746

页数：6

共 12 条

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[9] GROWTH OF GAAS AND ALAS THIN-FILMS BY A NEW ATOMIC LAYER EPITAXY TECHNIQUE [J].

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THIN SOLID FILMS, 1989, 174 :63-70

[10] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

OZEKI, M ;

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