ORDERING IN SI-GE SUPERLATTICES

被引:2
作者
KHOR, KE
DASSARMA, S
机构
[1] Department of Physics, University of Maryland, College Park
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 24期
关键词
D O I
10.1103/PhysRevB.50.18382
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study RH1 ordering in Si-Ge superlattices using empirical potentials for the Si-Ge system, one of which incorporates long-range interactions and accurately reproduces the phonon spectra as well as equilibrium structures. Our simulations show that the energy difference between the RH1 and the disordered phase remains small over a wide range of situations, which cannot account for the high transition temperature and the reversibility of the former. We consider experimental evidence of further frustration in the disordered phase only; even so we show that it fails to stabilize the RH1 phase up to the observed temperature. Experimentally, ordering is observed by means of transmission-electron diffraction done on thin samples cut in the (110) plane. Our simulations show that the reconstructions on the (110) surface may provide the missing energy necessary to stabilize RH1 ordering. © 1994 The American Physical Society.
引用
收藏
页码:18382 / 18386
页数:5
相关论文
共 51 条
[1]   ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES [J].
AMPO, H ;
MIURA, S ;
KATO, K ;
OHKAWA, Y ;
TAMURA, A .
PHYSICAL REVIEW B, 1986, 34 (04) :2329-2335
[2]  
[Anonymous], ELECTRONIC STRUCTURE
[3]   STRAIN-ENERGY AND STABILITY OF SI-GE COMPOUNDS, ALLOYS, AND SUPERLATTICES [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1991, 44 (04) :1663-1681
[4]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[5]   NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW B, 1987, 36 (12) :6434-6445
[6]  
BUBLIK VT, 1974, PHYS STATUS SOLIDI B, V66, P433
[7]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[8]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[9]   STRAINED SI/GE SUPERLATTICES - STRUCTURAL STABILITY, GROWTH, AND ELECTRONIC-PROPERTIES [J].
CIRACI, S ;
BATRA, IP .
PHYSICAL REVIEW B, 1988, 38 (03) :1835-1848
[10]   LATTICE-DYNAMICS OF SILICON WITH EMPIRICAL MANY-BODY POTENTIALS [J].
COWLEY, ER .
PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2379-2381