PAIR OF LOCAL VIBRATION MODE ABSORPTION-BANDS RELATED TO EL2 DEFECTS IN SEMI-INSULATING GAAS - COMMENT

被引：6

作者：

DESNICA, UV

SKOWRONSKI, M

CRETELLA, MC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.99339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：760 / 760

页数：1

共 7 条

[1] PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS [J].

FISCHER, DW .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1751-1753

[2] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J].

LAGOWSKI, J ;

GATOS, HC ;

KANG, CH ;

SKOWRONSKI, M ;

KO, KY ;

LIN, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :892-894

[3] METASTABLE STATE OF EL2 IN THE GAAS1-XPX ALLOY SYSTEM [J].

OMLING, P ;

SAMUELSON, L ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (08) :4534-4539

[4] METASTABILITY OF THE MIDGAP LEVEL EL 2 IN GAAS - RELATIONSHIP WITH THE AS ANTISITE DEFECT [J].

SKOWRONSKI, M ;

LAGOWSKI, J ;

GATOS, HC .

PHYSICAL REVIEW B, 1985, 32 (06) :4264-4267

[5] OPTICAL AND TRANSIENT CAPACITANCE STUDY OF EL2 IN THE ABSENCE AND PRESENCE OF OTHER MIDGAP LEVELS [J].

SKOWRONSKI, M ;

LAGOWSKI, J ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2451-2456

[6] PAIR OF LOCAL VIBRATION MODE ABSORPTION-BANDS RELATED TO EL2 DEFECTS IN SEMIINSULATING GAAS [J].

SONG, CY ;

GE, WK ;

JIANG, DH ;

HSU, CC .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1666-1668

[7] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J].

VINCENT, G ;

BOIS, D ;

CHANTRE, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3643-3649

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