LOW-FREQUENCY NOISE PERFORMANCE OF SELF-ALIGNED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：25

作者：

TANAKA, S ^{[1
]}

HAYAMA, H ^{[1
]}

FURUKAWA, A ^{[1
]}

BABA, T ^{[1
]}

MIZUTA, M ^{[1
]}

HONJO, K ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 18期

关键词：

Bipolar devices; Noise;

D O I：

10.1049/el:19900923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1439 / 1441

页数：3

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