SELF-ALIGNED ALINAS/GAINASHBTS FOR DIGITAL IC-APPLICATIONS

被引：5

作者：

TANAKA, S ^{[1
]}

FURUKAWA, A ^{[1
]}

BABA, T ^{[1
]}

OHTA, K ^{[1
]}

MADIHIAN, M ^{[1
]}

HONJO, K ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 14期

关键词：

D O I：

10.1049/el:19880594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：872 / 873

页数：2

共 9 条

[1]

FURUKAWA A, 1987, IEEE IEDM, P615

[2]

ISHIBASHI T, 1988, IEEE T ED, V26, P401

[3] PROTON-BOMBARDMENT IN N-TYPE AND P-TYPE GA0.47IN0.53AS [J].

KRAUTLE, H ;

LINDTJORN, O ;

BENEKING, H .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :1033-&

[4]

Madihian M., 1987, GaAs IC Symposium: IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1987 (Cat. No.87CH2506-4), P113

[5] HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

NOTTENBURG, RN ;

TEMKIN, H ;

PANISH, MB ;

HAMM, RA .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1112-1114

[6]

STOCKER HJ, 1984, APPL PHYS LETT, V42, P85

[7] PLANAR TYPE VAPOR-PHASE EPITAXIAL IN0.53GA0.47AS PHOTO-DIODE [J].

SUSA, N ;

YAMAUCHI, Y ;

ANDO, H ;

KANBE, H .

ELECTRON DEVICE LETTERS, 1980, 1 (04) :55-57

[8] NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTOR USING A PATTERN-INVERSION METHOD [J].

TANAKA, S ;

MADIHIAN, M ;

TOYOSHIMA, H ;

HAYAMA, N ;

HONJO, K .

ELECTRONICS LETTERS, 1987, 23 (11) :562-564

[9]

WON T, APPL PHYS LETT, V52, P552

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