ARSENIC POLYPS ON CONTACTS TO GAAS

被引：2

作者：

GORONKIN, H

CONVEY, D

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期

关键词：

D O I：

10.1109/16.19974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：600 / 603

页数：4

共 6 条

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[2] ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS [J].

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[3] AN IMPROVED AU-GE-NI OHMIC CONTACT TO NORMAL-TYPE GAAS [J].

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PIERCY, GR .

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[4]

JOHNSON K, COMMUNICATION

[5] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].

KUAN, TS ;

BATSON, PE ;

JACKSON, TN ;

RUPPRECHT, H ;

WILKIE, EL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957

[6] SCHOTTKY AND OHMIC AU CONTACTS ON GAAS - MICROSCOPIC AND ELECTRICAL INVESTIGATION [J].

LILIENTALWEBER, Z ;

GRONSKY, R ;

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NEWMAN, N ;

SPICER, WE ;

WEBER, ER .

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