AN IMPROVED AU-GE-NI OHMIC CONTACT TO NORMAL-TYPE GAAS

被引：32

作者：

BRUCE, RA ^{[1
]}

PIERCY, GR ^{[1
]}

机构：

[1] MCMASTER UNIV,HAMILTON L8S 4L8,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 07期

关键词：

ELECTRIC CONTACTS; OHMIC - GOLD GERMANIUM NICKEL ALLOYS;

D O I：

10.1016/0038-1101(87)90112-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relation of contact resistance to heat treatment and microstructure was examined for the three following ohmic contact metallizations on n-GaAs: 200 A Ge/200 A Ni/2000 A Au, 200 A Au-Ge/200 A Ni/2000 A Au and 1000 A Au-Ge/200 A Ni. After an initial anneal at 440 degree C, the Ge/Ni/Au metallization had the lowest contact resistance and the highest proportion of the Ni-Ge-As phase at the GaAs/contact interface. It was also the most stable with subsequent aging at 330 degree C, this stability being attributed to the Ni-Ge-As phase acting as a diffusion barrier at the GaAs/contact interface.

引用

页码：729 / 737

页数：9

共 13 条

[1] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].