GALLIUM-VACANCY-DEPENDENT DIFFUSION-MODEL OF OHMIC CONTACTS TO GAAS

被引:25
作者
GUPTA, RP
KHOKLE, WS
机构
关键词
D O I
10.1016/0038-1101(85)90070-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:823 / 830
页数:8
相关论文
共 102 条
[1]   CONTACT RESISTIVITY AND DOPANT ACTIVATION IN PULSED-LASER-ANNEALED AU-GE/GAAS CONTACTS [J].
AINA, O ;
KATZ, W .
THIN SOLID FILMS, 1983, 104 (3-4) :401-407
[2]   SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS [J].
ANDERSON, WT ;
CHRISTOU, A ;
DAVEY, JE .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2998-3000
[3]   LASER ANNEALED TA-GE AND NI-GE OHMIC CONTACTS TO GAAS [J].
ANDERSON, WT ;
CHRISTOU, A ;
GIULIANI, JF .
ELECTRON DEVICE LETTERS, 1981, 2 (05) :115-117
[4]   PROPERTIES OF N-TYPE GE-DOPED EPITAXIAL GAAS LAYERS GROWN FROM AU-RICH MELTS [J].
ANDREWS, AM ;
HOLONYAK, N .
SOLID-STATE ELECTRONICS, 1972, 15 (06) :601-&
[5]   ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].
ANDREWS, JM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984
[6]  
[Anonymous], SEMICOND SEMIMET
[7]   OHMIC CONTACTS ON N-GAAS PRODUCED BY LASER ALLOYING OF GE FILMS [J].
BADERTSCHER, G ;
SALATHE, RP ;
LUTHY, W .
ELECTRONICS LETTERS, 1980, 16 (04) :113-114
[8]   EVALUATION OF BARRIER METALS FOR SINTERED PLATINUM-GAAS CONTACTS [J].
BERENZ, JJ ;
SCILLA, GJ ;
WRICK, VL ;
EASTMAN, LF ;
MORRISON, GH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (06) :1152-1157
[9]   ALLOYING TO III-V COMPOUND SURFACES [J].
BERNSTEIN, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) :270-272
[10]   OHMIC CONTACTS TO GAAS [J].
BRASLAU, N .
THIN SOLID FILMS, 1983, 104 (3-4) :391-397