PROPERTIES OF N-TYPE GE-DOPED EPITAXIAL GAAS LAYERS GROWN FROM AU-RICH MELTS

被引：19

作者：

ANDREWS, AM

HOLONYAK, N

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(72)90001-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / &

共 13 条

[1] ANDREWS A, TO BE PUBLISHED
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[9] LASER OPERATION OF CDSE PUMPED WITH A GA(ASP) LASER DIODE
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[10] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES
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