GALLIUM-VACANCY-DEPENDENT DIFFUSION-MODEL OF OHMIC CONTACTS TO GAAS

被引：25

作者：

GUPTA, RP

KHOKLE, WS

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期

关键词：

D O I：

10.1016/0038-1101(85)90070-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：823 / 830

页数：8

共 102 条

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