INTERDIFFUSION AND DEGRADATION OF SI-CR-PT-AG IMPATT DIODE METALLIZATION

被引：4

作者：

MUKHERJEE, SD ^{[1
]}

MORGAN, DV ^{[1
]}

HOWES, MJ ^{[1
]}

机构：

[1] UNIV LEEDS, DEPT ELECT & ELECTR ENGN, LEEDS LS2 9JT, W YORKSHIRE, ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 06期

关键词：

contacts; films; microwave; migration;

D O I：

10.1149/1.2129172

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Interdiffusion and degradation of Cr/Pt/Ag multiple metallization layers for silicon IMPATT diode applications have been studied experimentally using Rutherford backscattering analysis, secondary ion mass spectrometry, and scanning electron microscopy. Diffusion coefficients for grain boundary diffusion and grain boundary-assisted bulk diffusion of Pt in Ag and the corresponding activation energies have been determined. The effect of time on grain boundary diffusion showing rapid initial growth and eventual saturation of solute (Pt) in Ag grains has been studied in detail and its effect on device failure caused by the possible depletion of the Pt barrier layer is discussed. Samples annealed in air showed substantial degradation of the Ag layer due to chlorine contamination. The Cr/Pt interface has been found to be stable up to 400°C but annealing at or above 500°C caused considerable mixing between Si, Cr, and Pt. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1047 / 1053

页数：7

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