CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE

被引：2

作者：

PALMSTROM, CJ ^{[1
]}

MORGAN, DV ^{[1
]}

HOWES, MJ ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 17期

关键词：

D O I：

10.1049/el:19770368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：504 / 505

页数：2

共 9 条

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[5]

PALMSTROM CJ, 1977, 3RD P INT C ION BEAM

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PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

[7] METALLURGICAL AND ELECTRICAL PROPERTIES OF ALLOYED NI-AU-GE FILMS ON N-TYPE GAAS [J].

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :331-&

[8] REMOVAL OF THIN (20A) LAYERS OF METALS METAL OXIDES AND CERAMICS BY MECHANICAL POLISHING [J].

WHITTON, JL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3917-&

[9]

YOKOYAMA N, 1974, JAPAN J APPL PHYS, P1071

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