CONTACT RESISTIVITY AND DOPANT ACTIVATION IN PULSED-LASER-ANNEALED AU-GE/GAAS CONTACTS

[1] ELECTRICAL-PROPERTIES OF LASER ANNEALED AUGE-GAAS OHMIC CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6997 - 7001

[2] AINA O, 1982, THESIS RENSSELAER PO

[3] [Anonymous], SEMICOND SEMIMET

[4] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[5] AU-GE BASED OHMIC CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 792 - 793

[6] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[8] PIANETTA PA, 1980, 1979 P S LAS EL BEAM, P328

[9] EXACT DERIVATION OF CONTACT RESISTANCE TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (05) : 715 - 719

[10] BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2414 - &

[1] ELECTRICAL-PROPERTIES OF LASER ANNEALED AUGE-GAAS OHMIC CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6997 - 7001

[2] AINA O, 1982, THESIS RENSSELAER PO

[3] [Anonymous], SEMICOND SEMIMET

[4] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[5] AU-GE BASED OHMIC CONTACTS TO GAAS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 792 - 793

[6] HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[8] PIANETTA PA, 1980, 1979 P S LAS EL BEAM, P328

[9] EXACT DERIVATION OF CONTACT RESISTANCE TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (05) : 715 - 719

[10] BEHAVIOR OF GERMANIUM IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2414 - &