AU-GE BASED OHMIC CONTACTS TO GAAS

被引：6

作者：

GROVENOR, CRM

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 08期

关键词：

D O I：

10.1016/0038-1101(81)90064-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：792 / 793

页数：2

共 20 条

[1]

BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[2] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].

CHADI, DJ ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163

[3] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J].

GUHA, S ;

ARORA, BM ;

SALVI, VP .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :431-&

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

GYULAI, J ;

MAYER, JW ;

RODRIGUEZ, V ;

YU, AYC ;

GOPEN, HJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+

[5] OHMIC CONTACTS ON ION-IMPLANTED N-TYPE GAAS-LAYERS [J].

INADA, T ;

KATO, S ;

HARA, T ;

TOYODA, N .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4466-4468

[6] UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS [J].

JAROS, M ;

HARTNAGEL, HL .

SOLID-STATE ELECTRONICS, 1975, 18 (11) :1029-1030

[7] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[8] INVESTIGATION OF THE AG-IN-GE SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

MCGUIRE, GE ;

WISSEMAN, WR ;

RAGLE, RD ;

TREGILGAS, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :141-144

[9] ALLOYING OF GOLD AND GOLD ALLOY OHMIC CONTACT METALLIZATIONS WITH GALLIUM-ARSENIDE [J].

MILLER, DC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :467-475

[10]

Milnes A.G, 1973, DEEP IMPURITIES SEMI, P54

← 1 2 →