共 349 条
[1]
ABDUVAKHIDOV KM, 1967, SOV PHYS SEMICOND+, V1, P788
[2]
AGGARWAL RL, 1972, SEMICONDUCT SEMIMET, V9, pCH2
[3]
ALEKSEEV MA, 1985, SOV PHYS SEMICOND+, V19, P443
[4]
ANDRUKHIV MG, 1979, SOV PHYS SEMICOND+, V13, P210
[5]
TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1974, 9 (12)
:5168-5177
[6]
POLARIZATION DEPENDENCE OF 2-PHOTON ABSORPTION IN SOLIDS
[J].
PHYSICAL REVIEW,
1968, 171 (03)
:997-&
[7]
CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS
[J].
PHYSICS LETTERS,
1963, 6 (02)
:143-145
[8]
MINORITY-CARRIER LIFETIME IN LPE HG1-XCDX TE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983, 1 (03)
:1749-1751
[9]
CHARACTERIZATION OF IMPURITIES IN P-TYPE HGCDTE BY PHOTO-HALL TECHNIQUES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (04)
:2047-2050
[10]
COMPENSATION DENSITIES IN NORMAL-TYPE HG1-XCDXTE FROM TRANSPORT-PROPERTIES OF OPTICALLY GENERATED FREE-CARRIERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983, 1 (03)
:1669-1671