ANALYSIS OF THE DISPERSIVE DIFFUSION OF ATOMS IN DISORDERED SOLIDS

被引:12
作者
HALPERN, V
机构
[1] Department of Physics, Bar-Ilan University
关键词
D O I
10.1103/PhysRevLett.67.611
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the theoretical analysis of dispersive transport, it is essential to take account of the actual initial conditions. In transient photoconductivity experiments, all the particles are initially in a transport state, but in those on atomic diffusion the atoms are often initially in thermal equilibrium at a temperature less than that at which the diffusion is measured. We show that the multiple-trapping model, which explains well the photoconductivity results, cannot account for those on the diffusion of H atoms in a-Si:H, for which it has often been proposed.
引用
收藏
页码:611 / 613
页数:3
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