LATTICE VACANCIES IN TIN AND HFN FILMS - A STUDY BY POSITRON-ANNIHILATION

被引：30

作者：

BRUNNER, J ^{[1
]}

PERRY, AJ ^{[1
]}

机构：

[1] GTE VALENITE CORP,TROY,MI 48084

来源：

关键词：

D O I：

10.1016/0040-6090(87)90174-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：103 / 113

页数：11

共 37 条

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PERRY, AJ
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[5] LOW-TEMPERATURE OXIDATION BEHAVIOR OF REACTIVELY SPUTTERED TIN BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND CONTACT RESISTANCE MEASUREMENTS
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[6] Hautojarvi P., 1979, Positrons in solids, P1
[7] THE MICROSTRUCTURE OF REACTIVELY SPUTTERED TI-N FILMS CONTAINING THE TI2N PHASE
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[8] PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF STOICHIOMETRIC AND SUBSTOICHIOMETRIC TIN AND ZRN
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[J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7183 - 7191
[9] MICROSTRUCTURE AND HARDNESS OF TI(C,N) COATINGS ON STEEL PREPARED BY THE ACTIVATED REACTIVE EVAPORATION TECHNIQUE
JACOBSON, BE
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DOERR, HJ
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[J]. THIN SOLID FILMS, 1984, 118 (03) : 285 - 292
[10] REACTIVELY MAGNETRON SPUTTERED HF-N FILMS .1. COMPOSITION AND STRUCTURE
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SUNDGREN, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3104 - 3111