RAPID PHOTO-DEPOSITION OF SILICON DIOXIDE FILMS USING 172-NM VUV LIGHT

被引：9

作者：

BERGONZO, P

BOYD, IW

机构：

[1] Electronic and Electrical Engineering, University College London, London WCIE 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 07期

关键词：

CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; DIELECTRIC THIN FILMS; INSULATING THIN FILMS; SILICON DIOXIDE;

D O I：

10.1049/el:19940412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is presented for the rapid direct photo-deposition of silicon dioxide using silane and oxygen mixtures and 172 nm radiation generated from a xenon excimer lamp. The growth rates obtained reach 500 angstrom/min at 300-degrees-C, some 200% faster than previously achieved using either low temperature CVD or traditional optical sources.

引用

页码：606 / 608

页数：3

共 20 条

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