QUANTUM TRANSPORT IN GAAS DOPING SUPER-LATTICES

被引：15

作者：

MAAN, JC ^{[1
]}

ENGLERT, T ^{[1
]}

UIHLEIN, C ^{[1
]}

KUNZEL, H ^{[1
]}

PLOOG, K ^{[1
]}

FISCHER, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 292

页数：4

共 14 条

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[8] G-FACTOR ENHANCEMENT IN THE 2D ELECTRON-GAS IN GAAS/ALGAAS HETEROJUNCTIONS [J].

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[10] THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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