SCANNING TUNNELING MICROSCOPIC STUDY ON THE INITIAL GROWTH OF BI2SR2CUO6 THIN-FILMS ON SRTIO3(001) BY LASER MOLECULAR-BEAM EPITAXY

被引：12

作者：

KOGUCHI, K

MATSUMOTO, T

KAWAI, T

KAWAI, S

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 4A期

关键词：

STM; RHEED; BI2SR2CUO6; LASER MOLECULAR BEAM EPITAXY; INITIAL STAGE OF GROWTH; LAYERED GROWTH;

D O I：

10.1143/JJAP.33.L514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth mechanism of Bi2Sr2CuO6 thin films has been studied using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) on c-axis oriented ultrathin films prepared by laser molecular beam epitaxy (MBE). Layered growth films show an atomically flat surface with 0.4 nm height steps, suggesting the existence of an extra BiO layer on the topmost surface. The modulation structure strongly affects growth direction in the a-b plane. Preferential growth occurs along the modulation-free a-axis. Comparison has been made between STM images and RHEED patterns during the growth.

引用

页码：L514 / L516

页数：3

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