THE EFFECT OF THERMAL ANNEALING ON THE PROPERTIES OF ALUMINA FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE

被引：7

作者：

HAANAPPEL, VAC

VANCORBACH, HD

FRANSEN, T

GELLINGS, PJ

机构：

[1] University of Twente, Department of Chemical Technology, 7500 AE Enschede

来源：

SURFACE & COATINGS TECHNOLOGY | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1016/0257-8972(94)90106-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films deposited at 330-degrees-C by metal organic chemical vapour deposition on stainless steel, type AISI 304, were annealed in a nitrogen atmosphere for 1, 2 and 4 h at 600, 700 and 800-degrees-C. The film properties, including the protection of the underlying substrate against high temperature corrosion, the chemical composition of the film and the microstructure, were investigated. Corrosion experiments performed at 450-degrees-C in a hydrogen sulphide containing gas, showed that the cracks in the alumina films almost completely disappeared after a post-deposition heat treatment, probably as a result of stress relaxation. The porosity of the alumina films was not affected by this heat treatment. X-ray diffraction measurements of these films, deposited at 330-degrees-C, revealed an amorphous structure. Owing to the thermal annealing process, the amorphous alumina films were converted to gamma-alumina, and OH-groups disappeared.

引用

页码：183 / 193

页数：11

共 27 条

[21] Ramos F., 1992, Materials and Manufacturing Processes, V7, P251, DOI 10.1080/10426919208947414
[22] Saalfeld H., 1960, N JAHRB MINERAL ABH, V95, P1
[23] CHEMICAL VAPOR-DEPOSITION OF AL2O3 THIN-FILMS UNDER REDUCED PRESSURES
SARAIE, J
KOWN, J
YODOGAWA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 890 - 892
[24] THERMAL TRANSFORMATIONS OF ALUMINAS AND ALUMINA HYDRATES
STUMPF, HC
RUSSELL, AS
NEWSOME, JW
TUCKER, CM
[J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1950, 42 (07): : 1398 - 1403
[25] FORMATION OF ALUMINUM-OXIDE FILMS FROM ALUMINUM HEXAFLUOROACETYLACETONATE AT 350-450-DEGREES C
TEMPLE, D
REISMAN, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (09) : 995 - 1002
[26] VERWEY JF, 1980, I PHYS C SER, V50, P62
[27] WEFERS K, 1987, 19 ALC RES LAB ALC T

← 1 2 3 →