PROPERTIES OF GAAS AL0.53GA0.47AS AVALANCHE PHOTODIODE WITH SUPERLATTICE FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

SUSA, N

OKAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 03期

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D O I：

10.1143/JJAP.23.317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：317 / 321

页数：5

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