INVESTIGATION OF SHORT-TIME DONOR ANNIHILATION IN SILICON

被引:14
作者
OMARA, WC
PARKER, JE
BUTLER, P
GAT, A
机构
[1] NBK CORP,SANTA CLARA,CA 95051
[2] AG ASSOCIATES,PALO ALTO,CA 94043
关键词
D O I
10.1063/1.95665
中图分类号
O59 [应用物理学];
学科分类号
摘要
12
引用
收藏
页码:299 / 301
页数:3
相关论文
共 12 条
[11]   DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURE [J].
STAVOLA, M ;
PATEL, JR ;
KIMERLING, LC ;
FREELAND, PE .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :73-75
[12]   ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICON [J].
WRUCK, D ;
GAWORZEWSKI, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02) :557-564