ION INDUCED REACTIONS IN FE/AL BILAYERS BY PULSED-BEAM ION IRRADIATION AND XE IMPLANTATION

被引:15
作者
NASTASI, M
FASTOW, R
GYULAI, J
MAYER, JW
PLIMPTON, SJ
WOLF, ED
ULLRICH, BM
机构
[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
[2] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853
[3] CORNELL UNIV,CTR TANDEM ACCELERATOR,ITHACA,NY 14853
关键词
D O I
10.1016/0168-583X(85)90438-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:585 / 590
页数:6
相关论文
共 14 条
[1]   MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J].
ADESIDA, I ;
KARAPIPERIS, L .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4) :223-233
[2]   TEST FOR NONTHERMAL TRANSIENT ANNEALING IN SILICON [J].
BAGLIN, JEE ;
HODGSON, RT ;
NERI, JM ;
FASTOW, R .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :299-301
[3]  
Brown W.L., 1980, LASER ELECT BEAM PRO, P20
[4]   EPITAXIAL NISI2 FORMATION BY PULSED ION-BEAM ANNEALING [J].
CHEN, LJ ;
HUNG, LS ;
MAYER, JW ;
BAGLIN, JEE ;
NERI, JM ;
HAMMER, DA .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :595-597
[5]  
DAVIES JA, 1983, SURFACE MODIFICATION, P189
[6]  
FASTOW R, UNPUB PHYS REV B
[7]  
FASTOW R, UNPUB
[8]  
HANSEN M, 1958, CONSTITUTION BINARY, P90
[9]   ION-BEAM ANNEALING OF SEMICONDUCTORS [J].
HODGSON, RT ;
BAGLIN, JEE ;
PAL, R ;
NERI, JM ;
HAMMER, DA .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189
[10]   MICROSTRUCTURE OF AL-8 WT PERCENT FE-BASED ALLOYS PREPARED BY RAPID QUENCHING FROM LIQUID-STATE [J].
JACOBS, MH ;
DOGGETT, AG ;
STOWELL, MJ .
JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) :1631-1643