TEST FOR NONTHERMAL TRANSIENT ANNEALING IN SILICON

被引：4

作者：

BAGLIN, JEE

HODGSON, RT

NERI, JM

FASTOW, R

机构：

[1] CORNELL UNIV,PLASMA STUDIES LAB,ITHACA,NY 14853

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：299 / 301

页数：3

共 7 条

[1]

Baeri P., 1982, LASER ANNEALING SEMI

[2] PULSED PROTON-BEAM ANNEALING - SEMICONDUCTORS AND SILICIDES [J].

BAGLIN, JEE ;

HODGSON, RT ;

CHU, WK ;

NERI, JM ;

HAMMER, DA ;

CHEN, LJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3) :169-176

[3] PULSED ION-BEAM IRRADIATION OF SILICON [J].

CHU, WK ;

MADER, SR ;

GOREY, EF ;

BAGLIN, JEE ;

HODGSON, RT ;

NERI, JM ;

HAMMER, DA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :443-447

[4]

Compaan A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P43

[5] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[6] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457

[7]

VANVECHTEN JA, 1980, J PHYS-PARIS, V41, pC15

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