EFFECT OF CARBON ON FORMATION OF ELECTRON-IRRADIATION-INDUCED SECONDARY DEFECTS IN SILICON

被引：19

作者：

HASEBE, M

OSHIMA, R

FUJITA, FE

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：159 / 160

页数：2

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[7] HIGH-VOLTAGE ELECTRON-MICROSCOPE STUDY OF DEFECTS IN SILICON [J].

OSHIMA, R ;

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FUJITA, FE .

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[8] [113] LOOPS IN ELECTRON-IRRADIATED SILICON [J].

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