A HIGH-SENSITIVITY INTEGRATED-CIRCUIT CAPACITIVE PRESSURE TRANSDUCER

[11] A MONOLITHIC CAPACITIVE PRESSURE SENSOR WITH PULSE-PERIOD OUTPUT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 927 - 930

[12] SKURNIK D, 1980, THESIS CASE WESTERN

[13] Timoshenko S., 1959, THEORY PLATES SHELLS, V2

[14] WILLIS G, 1969, J APPL PHYS, V40, P3946

[15] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS .2. GENERATION-RECOMBINATION CURRENT [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3527 - &

[16] SEMICONDUCTOR MECHANICAL SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (10) : 855 - &

[11] A MONOLITHIC CAPACITIVE PRESSURE SENSOR WITH PULSE-PERIOD OUTPUT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 927 - 930

[12] SKURNIK D, 1980, THESIS CASE WESTERN

[13] Timoshenko S., 1959, THEORY PLATES SHELLS, V2

[14] WILLIS G, 1969, J APPL PHYS, V40, P3946

[15] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS .2. GENERATION-RECOMBINATION CURRENT [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3527 - &

[16] SEMICONDUCTOR MECHANICAL SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (10) : 855 - &