DIRECT TRANSITION + EXCITON EFFECTS IN PHOTOCONDUCTIVITY OF GALLIUM PHOSPHIDE

[1] INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .1. ABSORPTION IN N-TYPE MATERIAL [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526): : 315 - &

[2] BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062

[3] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2071 - &

[4] BUBE RH, 1961, PHYS CHEM SOLIDS, V22, P173

[5] EDWARDS AL, 1959, PHYS CHEM SOLIDS, V11, P140

[6] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[7] FROSCH CJ, UNPUBLISHED

[8] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[9] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[10] GERSHENZON M, 1962, P INT C PHYS SEMICON, P752

[1] INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .1. ABSORPTION IN N-TYPE MATERIAL [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526): : 315 - &

[2] BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062

[3] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2071 - &

[4] BUBE RH, 1961, PHYS CHEM SOLIDS, V22, P173

[5] EDWARDS AL, 1959, PHYS CHEM SOLIDS, V11, P140

[6] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[7] FROSCH CJ, UNPUBLISHED

[8] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[9] VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 548 - 551

[10] GERSHENZON M, 1962, P INT C PHYS SEMICON, P752