TEMPERATURE-DEPENDENT STUDIES OF THE OPTICAL-PROPERTIES OF POST-HYDROGENATED SPUTTERED A-SI-H

被引：6

作者：

DECHELLE, F

BERGER, JM

DENEUVILLE, A

BRUYERE, JC

COULIBALY, SP

FERRATON, JP

DONNADIEU, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 64卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90200-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 10

页数：10

共 25 条

[1] INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J].

ABE, S ;

TOYOZAWA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) :2185-2194

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4]

BRUYERE JC, 1980, J APPL PHYS, V51, P2199, DOI 10.1063/1.327895

[5]

BRUYERE JC, 1980, J PHYS LETT-PARIS, V41, pL27, DOI 10.1051/jphyslet:0198000410202700

[6]

BRUYERE JC, 1979, CR ACAD SCI B PHYS, V289, P285

[7]

BUSTARRET E, 1981, P CVD 81, P347

[8]

CODY GD, 1981, PHYS REV LETT, V47, P480

[9] THICKNESS DEPENDENCE OF HYDROGEN IN A-SI-H FILMS DEPOSITED ON C-SI [J].

CURRIE, JF ;

DEPELSENAIRE, P ;

GALARNEAU, S ;

LECUYER, J ;

GROLEAU, R ;

BRUYERE, JC ;

DENEUVILLE, A .

JOURNAL DE PHYSIQUE LETTRES, 1981, 42 (15) :L373-L376

[10] LOW-TEMPERATURE OPTICAL INVESTIGATION OF URBACH TAIL IN AMORPHOUS GEXTE1-X ALLOYS IN LIGHT OF ANDERSON MODEL [J].

DENEUVILLE, A ;

MINI, A ;

CHAKRAVERTY, BK .

PHYSICAL REVIEW LETTERS, 1976, 37 (05) :295-298

← 1 2 3 →