HIGH-DETECTIVITY (GREATER-THAN-1X1010 CM-SQUARE-ROOT-HZ W), INASSB STRAINED-LAYER SUPERLATTICE, PHOTOVOLTAIC INFRARED DETECTOR

被引：49

作者：

KURTZ, SR

DAWSON, LR

ZIPPERIAN, TE

WHALEY, RD

机构：

[1] Sandia National Laboratories, Albuquerque, NM

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46929

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-detectivity infrared photodiode was constructed using an InAso.15Sbo.85/InSb strained-layer superlattice (SLS). The surface passivated device exhibited detectivities ≥1 × 1010 cm √Hz/W at wavelengths ≥10 μm. This device demonstrates the feasibility of a long-wavelength, photovoltaic infrared detector technology based on InAsSb SLS’s. © 1990 IEEE

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页码：54 / 56

页数：3

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